ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON

被引：51

作者：

SERAPHIM, DP

BRENNEMANN, AE

FRIEDMAN, HL

DHEURLE, FM

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 04期

关键词：

D O I：

10.1147/rd.84.0400

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：400 / +

页数：1

共 12 条

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[9] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

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[10] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS [J].

THOMAS, JE ;

YOUNG, DR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :368-+

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