EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES

被引：52

作者：

KERR, DR

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 04期

关键词：

D O I：

10.1147/rd.84.0385

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：385 / &

相关论文

共 16 条

[1] ELECTRODE CONTROL OF SIO2-PASSIVATED PLANAR JUNCTIONS
CASTRUCCI, PP
LOGAN, JS
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 394 - &
[2] FEUERSANGER AE, 1963, IEEE T ELECTRON DEVI, VED10, P143
[3] SOME EFFECTS OF MATERIAL PARAMETERS ON THE DESIGN OF SURFACE SPACE-CHARGE VARACTORS
FRANKL, DR
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 71 - 76
[4] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
KERR, DR
LOGAN, JS
BURKHARDT, PJ
PLISKIN, WA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &
[5] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720
[6] SEMICONDUCTOR SURFACE VARACTOR
LINDNER, R
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +
[7] PERRI JA, 1961, OCT EL SOC SEM S
[8] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS
PLISKIN, WA
CONRAD, EE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &
[9] PLISKIN WA, 1964, ELECTROCHEM TECHNOL, V2, P196
[10] SPACE-CHARGE DEVELOPMENT IN GLASS
PROCTOR, TM
SUTTON, PM
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1960, 43 (04) : 173 - 179