ANODIC FORMATION OF OXIDE FILMS ON SILICON

被引：176

作者：

SCHMIDT, PF

MICHEL, W

机构：

来源：

关键词：

D O I：

10.1149/1.2428542

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：230 / 236

页数：7

共 28 条

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[3] BORNEMANN E, UNPUBLISHED
[4] THE SURFACE-BARRIER TRANSISTOR .1. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR
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[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12): : 1702 - 1706
[5] THEORY OF THE OXIDATION OF METALS
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MOTT, NF
[J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184
[6] IONIC CURRENT AND FILM GROWTH OF THIN OXIDE LAYERS ON ALUMINIUM
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (400): : 317 - 329
[7] ELECTRON AND PHOTOCURRENTS IN THIN FILMS OF ZIRCONIUM OXIDE
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[J]. ACTA METALLURGICA, 1953, 1 (03): : 348 - 354
[8] IONIC CURRENTS IN THIN FILMS OF ZIRCONIUM OXIDE
CHARLESBY, A
[J]. ACTA METALLURGICA, 1953, 1 (03): : 340 - 347
[9] CHARLESBY A, 1954, ACTA METALLURGICA, V2, P698
[10] CHARLESBY A, 1954, ACTA METALLURGICA, V2, P314