EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM

被引：21

作者：

CHEROFF, G

FANG, F

HOCHBERG, F

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1964年 / 8卷 / 04期

关键词：

D O I：

10.1147/rd.84.0416

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：416 / &

共 21 条

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[7] THEORY OF THIN FILM TRANSISTOR OPERATION [J].

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