AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE

[1] IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 802 - &

[2] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[3] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[4] DIFFUSION OF ALUMINUM IN SINGLE CRYSTAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) : 1430 - 1432

[5] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[6] ALUMINUM ION DIFFUSION IN ALUMINUM OXIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (05) : 957 - &

[7] ROBINSON PH, 1966, T METALLURGICAL SOC

[8] ROSS EC, 1966, IEEE T

[9] SIRTL E, 1961, Z METALLKD, V52, P529

[10] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427

[1] IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 802 - &

[2] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[3] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &

[4] DIFFUSION OF ALUMINUM IN SINGLE CRYSTAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) : 1430 - 1432

[5] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &

[6] ALUMINUM ION DIFFUSION IN ALUMINUM OXIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (05) : 957 - &

[7] ROBINSON PH, 1966, T METALLURGICAL SOC

[8] ROSS EC, 1966, IEEE T

[9] SIRTL E, 1961, Z METALLKD, V52, P529

[10] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427