IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH

[1] BASSECHES H, 1962, MET SEMICOND MAT, V15, P69

[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P388

[3] CAVE EF, 1963, RCA REV, V24, P573

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] A KINETIC THEORY FOR AUTODOPING FOR VAPOR PHASE EPITAXIAL GROWTH OF GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (10) : 1065 - 1068

[6] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[7] HILIBRAND J, 1960, RCA REV, V21, P245

[8] HULME KF, 1955, P PHYS SOC, VB 68, P393

[9] EPITAXIAL SILICON JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 394 - 400

[10] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1106 - 1108

[1] BASSECHES H, 1962, MET SEMICOND MAT, V15, P69

[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P388

[3] CAVE EF, 1963, RCA REV, V24, P573

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[5] A KINETIC THEORY FOR AUTODOPING FOR VAPOR PHASE EPITAXIAL GROWTH OF GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (10) : 1065 - 1068

[6] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[7] HILIBRAND J, 1960, RCA REV, V21, P245

[8] HULME KF, 1955, P PHYS SOC, VB 68, P393

[9] EPITAXIAL SILICON JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 394 - 400

[10] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1106 - 1108