REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON

被引：336

作者：

GROVE, AS

SAH, CT

LEISTIKO, O

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.1713825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2695 / &

共 20 条

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