CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON

被引：63

作者：

BACKENSTOSS, G

机构：

来源：

PHYSICAL REVIEW | 1957年 / 108卷 / 06期

关键词：

D O I：

10.1103/PhysRev.108.1416

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1416 / 1419

页数：4

共 18 条

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[7] HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON
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[10] THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS
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