DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON

[1] HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (03): : 724 - 725

[2] DORSEY NE, 1940, PROPERTIES ORDINARY, P200

[3] DISTORTION OF A CRYSTAL BY POINT IMPERFECTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (02) : 255 - 261

[4] Gallagher Gary, COMMUNICATION

[5] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[6] LINDERSTROM-LANG K., 1938, Comptes rendus des Travaux du Laboratoire Carlsberg, Ser. Chim., V21, P315

[7] LINDERSTROMLANG, 1941, COMPT REND TRAV LAB, V23, P17

[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[9] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[10] PRINCIPLES OF ZONE-MELTING [J]. JOURNAL OF METALS, 1952, 4 (07): : 747 - 753

[1] HALL MOBILITY OF ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (03): : 724 - 725

[2] DORSEY NE, 1940, PROPERTIES ORDINARY, P200

[3] DISTORTION OF A CRYSTAL BY POINT IMPERFECTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (02) : 255 - 261

[4] Gallagher Gary, COMMUNICATION

[5] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839

[6] LINDERSTROM-LANG K., 1938, Comptes rendus des Travaux du Laboratoire Carlsberg, Ser. Chim., V21, P315

[7] LINDERSTROMLANG, 1941, COMPT REND TRAV LAB, V23, P17

[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[9] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883

[10] PRINCIPLES OF ZONE-MELTING [J]. JOURNAL OF METALS, 1952, 4 (07): : 747 - 753