DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE

被引：75

作者：

DUMIN, DJ

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来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 09期

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D O I：

10.1063/1.1714564

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2700 / &

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共 12 条

[1] MECHANICAL STRESS CONSIDERATIONS IN THIN-FILM DEVICES
BUDO, Y
PRIEST, J
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 159 - &
[2] (111) SURFACE TENSIONS OF III-V COMPOUNDS AND THEIR RELATIONSHIP TO SPONTANEOUS BENDING OF THIN CRYSTALS
CAHN, JW
HANNEMAN, RE
[J]. SURFACE SCIENCE, 1964, 1 (04) : 387 - 398
[3] DENHARTOG JP, 1952, ADVANCED STRENGTH MA, P119
[4] THERMAL PROPERTIES OF ALUMINUM OXIDE FROM 0-DEGREES TO 1200-DEGREES-K
FURUKAWA, GT
DOUGLAS, TB
MCCOSKEY, RE
GINNINGS, DC
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1956, 57 (02): : 67 - 82
[5] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES
GLANG, R
HOLMWOOD, RA
ROSENFELD, RL
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +
[6] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1349 - &
[7] GROWN-FILM SILICON TRANSISTORS ON SAPPHIRE
MUELLER, CW
ROBINSON, PH
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1487 - &
[8] PRESSURE DEPENDENCE OF THE RESISTIVITY OF SILICON
PAUL, W
PEARSON, GL
[J]. PHYSICAL REVIEW, 1955, 98 (06): : 1755 - 1757
[9] THE EFFECT OF PRESSURE ON THE PROPERTIES OF GERMANIUM AND SILICON
PAUL, W
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 196 - 204
[10] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
[J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49