AUTOMATIC PLOTTING OF CONDUCTANCE AND CAPACITANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES OR ANY 2 TERMINAL COMPLEX ADMITTANCE

被引：33

作者：

SHEWCHUN, J

WAXMAN, A

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1966年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.1720456

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1195 / +

页数：1

共 16 条

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[8] INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON SI SURFACE POTENTIAL IN SI-SIO2 SYSTEM [J].

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[9]

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[10] IMAGE OF PHONON SPECTRUM IN TUNNELING CHARACTERISTIC BETWEEN SUPERCONDUCTORS [J].

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