ALTERNATE APPROACH TO RESOLUTION OF TUNNELING CURRENT STRUCTURE BY DIFFERENTIATION

被引：40

作者：

PATTERSON, WR

SHEWCHUN, J

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1964年 / 35卷 / 12期

关键词：

D O I：

10.1063/1.1719283

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

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页码：1704 / &

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[1] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS
CHYNOWETH, AG
THOMAS, DE
LOGAN, RA
[J]. PHYSICAL REVIEW, 1962, 125 (03): : 877 - &
[2] OBSERVATION OF STARK SPLITTING OF ENERGY BANDS BY MEANS OF TUNNELLING TRANSITIONS
CHYNOWETH, AG
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LOGAN, RA
THOMAS, DE
[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (02) : 57 - 58
[3] DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS
HALL, RN
RACETTE, JH
EHRENREICH, H
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 456 - 458
[4] EFFECT OF DEGENERATE SEMICONDUCTOR BAND STRUCTURE ON CURRENT-VOLTAGE CHARACTERISTICS OF SILICON TUNNEL DIODES
LOGAN, RA
CHYNOWETH, AG
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 89 - &
[5] TUNNELING CURRENT STRUCTURE RESOLUTION BY DIFFERENTIATION
THOMAS, DE
KLEIN, JM
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (08) : 920 - &