EFFECT OF DEGENERATE SEMICONDUCTOR BAND STRUCTURE ON CURRENT-VOLTAGE CHARACTERISTICS OF SILICON TUNNEL DIODES

被引：69

作者：

LOGAN, RA

CHYNOWETH, AG

机构：

来源：

PHYSICAL REVIEW | 1963年 / 131卷 / 01期

关键词：

D O I：

10.1103/PhysRev.131.89

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：89 / &

共 12 条

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[2] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS
CHYNOWETH, AG
THOMAS, DE
LOGAN, RA
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[3] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS
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LEE, CA
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[6] FERENDECI A, 1962, P IRE, V50, P1852
[7] DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS
HALL, RN
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EHRENREICH, H
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 456 - 458
[8] HOLONYAK N, 1961, METALLURGICAL SOCIET, V12, P81
[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE
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[J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &
[10] THEORY OF TUNNELING
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