NATIVE OXIDE FORMATION ON COMPOUND SEMICONDUCTORS

被引：1

作者：

LUCOVSKY, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：761 / 762

页数：2

共 16 条

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