INVERSION-LAYERS ON INP

被引:50
作者
MEINERS, LG
LILE, DL
COLLINS, DA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词
D O I
10.1116/1.570221
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1458 / 1461
页数:4
相关论文
共 8 条
[1]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52
[2]   N-CHANNEL INVERSION-MODE INP MISFET [J].
LILE, DL ;
COLLINS, DA ;
MEINERS, LG ;
MESSICK, L .
ELECTRONICS LETTERS, 1978, 14 (20) :657-659
[3]   AN INP MIS DIODE [J].
LILE, DL ;
COLLINS, DA .
APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556
[4]   DIELECTRIC AND INTERFACIAL CHARACTERISTICS OF MIS STRUCTURES ON INP AND GAAS [J].
LILE, DL ;
COLLINS, DA .
THIN SOLID FILMS, 1979, 56 (1-2) :225-234
[5]   ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J].
MEINERS, LG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1402-1407
[6]   INP-SIO2 MIS STRUCTURE [J].
MESSICK, L .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4949-4951
[7]   MICROWAVE INP-SIO2 MISFET [J].
MESSICK, L ;
LILE, DL ;
CLAWSON, AR .
APPLIED PHYSICS LETTERS, 1978, 32 (08) :494-495
[8]   INP-LANGMUIR-FILM MIS STRUCTURES [J].
ROBERTS, GG ;
PANDE, KP ;
BARLOW, WA .
ELECTRONICS LETTERS, 1977, 13 (19) :581-583