MICROWAVE INP-SIO2 MISFET

被引:33
作者
MESSICK, L
LILE, DL
CLAWSON, AR
机构
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D O I
10.1063/1.90098
中图分类号
O59 [应用物理学];
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页码:494 / 495
页数:2
相关论文
共 3 条
[1]   INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
BARRERA, JS ;
ARCHER, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030
[2]   MICROWAVE GAAS INSULATED GATE FET [J].
LILE, DL ;
COLLINS, DA ;
MESSICK, L ;
CLAWSON, AR .
APPLIED PHYSICS LETTERS, 1978, 32 (04) :247-248
[3]   INP-SIO2 MIS STRUCTURE [J].
MESSICK, L .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4949-4951