MICROWAVE GAAS INSULATED GATE FET

被引：11

作者：

LILE, DL

COLLINS, DA

MESSICK, L

CLAWSON, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 04期

关键词：

D O I：

10.1063/1.90007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：247 / 248

页数：2

相关论文

共 14 条

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES
BAYRAKTAROGLU, B
KOHN, E
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1976, 12 (02) : 53 - 54
[2] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
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HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[3] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1975, 11 (03) : 53 - 54
[4] GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
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[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759
[5] ENHANCEMENT-MODE GAAS MOSFET ON SEMI-INSULATING SUBSTRATE USING A SELF-ALIGNED GATE TECHNIQUE
KOHN, E
COLQUHOUN, A
[J]. ELECTRONICS LETTERS, 1977, 13 (03) : 73 - 74
[6] DEPLETION-MODE GAAS MOS FET
LILE, DL
CLAWSON, AR
COLLINS, DA
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 207 - 208
[7] OXIDE BARRIERS ON GAAS BY NEUTRALIZED ION-BEAM SPUTTERING
MEINERS, LG
PAN, RP
SITES, JR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 961 - 963
[8] GAAS-SIXOYNZ MIS FET
MESSICK, L
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5474 - 5475
[9] MESSICK L, UNPUBLISHED
[10] ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
SAWADA, T
HASEGAWA, H
[J]. ELECTRONICS LETTERS, 1976, 12 (18) : 471 - 472