NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES

被引：130

作者：

HASEGAWA, H ^{[1
]}

FORWARD, KE ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 10期

关键词：

D O I：

10.1063/1.87994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：567 / 569

页数：3

共 18 条

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[2]

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[5]

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[7]

FORWARD KE, UNPUBLISHED

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[9] GAAS INVERSION-TYPE MIS TRANSISTORS [J].

ITO, T ;

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[10]

ITO T, 1973, T IEEJ A, V93, P11

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