CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE

被引：285

作者：

DEAL, BE ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT CORP, RES & DEV LAB, PALO ALTO, CA 94304 USA

来源：

关键词：

D O I：

10.1149/1.2402380

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C198 / C205

页数：8

共 46 条

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[2] BALK P, 1965, MAY EL SOC M SAN FRA
[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[4] BURKHARDT PJ, 1966, T METALL SOC AIME, V236, P299
[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[7] DEAL BE, 1970, JUN P S NBS SIL DEV
[8] Deal BE, 1969, U. S. Patent, Patent No. [3,426,422, 3426422]
[9] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[10] DONOVAN RP, 1965, ASDTDR63316 RES TRIA, V7