GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON

[1] ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163

[2] INVESTIGATION OF OXIDATION OF COPPER BY USE OF RADIOACTIVE CU TRACER [J]. JOURNAL OF CHEMICAL PHYSICS, 1946, 14 (12) : 714 - 721

[3] Bird R.B., 2007, TRANSPORT PHENOMENA, V2nd

[4] THEORY OF THE OXIDATION OF METALS [J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184

[5] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[6] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 430 - +

[7] EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765

[8] Evans U. R., 1960, CORROSION OXIDATION, P819

[9] Evans U. R., 1924, T ELECTROCHEM SOC, V46, P247

[10] RATES OF FORMATION OF THERMAL OXIDES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 688 - 690

[1] ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163

[2] INVESTIGATION OF OXIDATION OF COPPER BY USE OF RADIOACTIVE CU TRACER [J]. JOURNAL OF CHEMICAL PHYSICS, 1946, 14 (12) : 714 - 721

[3] Bird R.B., 2007, TRANSPORT PHENOMENA, V2nd

[4] THEORY OF THE OXIDATION OF METALS [J]. REPORTS ON PROGRESS IN PHYSICS, 1948, 12 : 163 - 184

[5] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[6] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 430 - +

[7] EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765

[8] Evans U. R., 1960, CORROSION OXIDATION, P819

[9] Evans U. R., 1924, T ELECTROCHEM SOC, V46, P247

[10] RATES OF FORMATION OF THERMAL OXIDES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 688 - 690