RATES OF FORMATION OF THERMAL OXIDES OF SILICON

被引：39

作者：

EVITTS, HC

COOPER, HW

FLASCHEN, SS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 06期

关键词：

D O I：

10.1149/1.2426211

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：688 / 690

页数：3

相关论文

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[3] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[4] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN AND STEAM SUPPLEMENTARY DATA
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1292 - 1293
[5] Tolansky S., 1948, MULTIPLE BEAM INTERF