INTERFACE STATES IN SI-SIO2 INTERFACES

[1] SURFACE CHARGES AND SURFACE POTENTIAL IN SILICON SURFACE INVERSION LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 1003 - &

[2] ARNOLD E, 1969, INT C PROP USE MIS S, P193

[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[6] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866

[7] CASTAGNE R, 1970, THESIS PARIS

[8] ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 16 - +

[9] FAHRNER W, TO BE PUBLISHED

[10] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +

[1] SURFACE CHARGES AND SURFACE POTENTIAL IN SILICON SURFACE INVERSION LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 1003 - &

[2] ARNOLD E, 1969, INT C PROP USE MIS S, P193

[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[6] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866

[7] CASTAGNE R, 1970, THESIS PARIS

[8] ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 16 - +

[9] FAHRNER W, TO BE PUBLISHED

[10] MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4582 - +