MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES

被引：72

作者：

GOETZBERGER, A

NICOLLIA.FH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.1709189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4582 / +

页数：1

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