EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS

被引：227

作者：

SZE, SM

GIBBONS, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 09期

关键词：

D O I：

10.1016/0038-1101(66)90033-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：831 / &

共 11 条

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LOGAN, RA ;

WHITE, HG .

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[6]

LOGAN RA, 1966 P INT C SEM PHY

[7] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

PHYSICAL REVIEW, 1955, 99 (04) :1234-1241

[8]

MOLL JL, 1964, PHYSICS SEMICONDUCTO, pCH11

[9] DC FIELD DISTRIBUTION IN A SWEPT INTRINSIC SEMICONDUCTOR CONFIGURATION [J].

PRIM, RC .

BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (03) :665-694

[10]

SPEENEY DV, TO BE PUBLISHED

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