CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS

被引:46
作者
LOGAN, RA
WHITE, HG
机构
关键词
D O I
10.1063/1.1713978
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3945 / &
相关论文
共 10 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[2]   THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 108 (01) :29-34
[3]   INFRARED LATTICE ABSORPTION OF GAP [J].
KLEINMAN, DA ;
SPITZER, WG .
PHYSICAL REVIEW, 1960, 118 (01) :110-117
[4]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[5]   CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J].
LOGAN, RA ;
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1649-&
[6]   RADIATIVE RECOMBINATION IN GAP P-N AND TUNNEL JUNCTIONS [J].
LOGAN, RA ;
GERSHENZON, M ;
TRUMBORE, FA ;
WHITE, HG .
APPLIED PHYSICS LETTERS, 1965, 6 (06) :113-+
[7]   AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J].
LOGAN, RA ;
CHYNOWETH, AG ;
COHEN, BG .
PHYSICAL REVIEW, 1962, 128 (06) :2518-&
[8]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[9]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241
[10]  
MORGAN TN, PRIVATE COMMUNICATIO