CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS

被引：75

作者：

LOGAN, RA

CHYNOWETH, AG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.1728804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1649 / &

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[1] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS
CHYNOWETH, AG
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[4] UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS
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[5] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON
CHYNOWETH, AG
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[6] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS
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[7] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1338 - &
[8] THE FORWARD CHARACTERISTIC OF THE PIN DIODE
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 685 - 706
[9] LEE CA, TO BE PUBLISHED
[10] AVALANCHE BREAKDOWN IN SILICON
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[J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884