AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS

被引：91

作者：

LOGAN, RA

CHYNOWETH, AG

COHEN, BG

机构：

来源：

PHYSICAL REVIEW | 1962年 / 128卷 / 06期

关键词：

D O I：

10.1103/PhysRev.128.2518

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2518 / &

共 17 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J].

BATDORF, RL ;

CHYNOWETH, AG ;

DACEY, GC ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1153-1160

[3] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 108 (01) :29-34

[4] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[5]

CHYNOWETH AG, 1959, J APPL PHYS, V30, P1811

[6] VOLTAGE DEPENDENCE OF MICROPLASMA DENSITY IN P-N JUNCTIONS IN SILICON [J].

GOETZBERGER, A ;

STEPHENS, C .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2646-&

[7] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .2. CLASSIFICATION OF WEAK SPOTS IN DIFFUSED P-N JUNCTIONS [J].

KIKUCHI, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (10) :1822-1831

[8] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J].

KIKUCHI, M ;

TACHIKAWA, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) :835-848

[9]

LEE CC, PRIVATE COMMUNICATIO

[10] CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J].

LOGAN, RA ;

CHYNOWETH, AG .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1649-&

← 1 2 →