VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1.

被引：52

作者：

KIKUCHI, M

TACHIKAWA, K

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1960年 / 15卷 / 05期

关键词：

D O I：

10.1143/JPSJ.15.835

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：835 / 848

页数：14

共 14 条

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CHAMPLIN, KS .

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[2]

CHENOWETH AG, 1958, J APPL PHYS, V29, P1103

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1956, 102 (02) :369-376

[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110

[5]

CHYNOWETH AG, 1956, PHYS REV, V102, P259

[6] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[7] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1955, 100 (02) :606-615

[8]

HAYNES JR, 1955, PHYS REV, V100, P311

[9] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[10] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J].

NEWMAN, R .

PHYSICAL REVIEW, 1955, 100 (02) :700-703

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