TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON

被引：117

作者：

HAYNES, JR

HORNBECK, JA

机构：

来源：

PHYSICAL REVIEW | 1955年 / 100卷 / 02期

关键词：

D O I：

10.1103/PhysRev.100.606

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：606 / 615

页数：10

共 11 条

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