TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON

被引：249

作者：

HORNBECK, JA

HAYNES, JR

机构：

来源：

PHYSICAL REVIEW | 1955年 / 97卷 / 02期

关键词：

D O I：

10.1103/PhysRev.97.311

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：311 / 321

页数：11

共 11 条

[1] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1953, 92 (06) :1424-1428

[2]

GEBBIE, 1953, PHYS REV, V91, pA230

[3]

HANNAY, 1954, PHYS REV, V96, P833

[4] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1953, 90 (01) :152-153

[5] THE DRIFT MOBILITY OF ELECTRONS IN SILICON [J].

HAYNES, JR ;

WESTPHAL, WC .

PHYSICAL REVIEW, 1952, 85 (04) :680-680

[6] MICROSECOND TRANSIENT CURRENTS IN THE PULSED TOWNSEND DISCHARGE [J].

HORNBECK, JA .

PHYSICAL REVIEW, 1951, 83 (02) :374-379

[7]

HORNBECK JA, 1954, PHYS REV, V94, P1437

[8] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J].

PRINCE, MB .

PHYSICAL REVIEW, 1954, 93 (06) :1204-1206

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[10]

WANNIER GH, 1953, PHYS REV, V91, pA207

← 1 2 →