SURFACE CHARGES AND SURFACE POTENTIAL IN SILICON SURFACE INVERSION LAYERS

被引：20

作者：

ARNOLD, E

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 12期

关键词：

D O I：

10.1109/T-ED.1968.16553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1003 / &

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共 8 条

[1] SYMMETRY OF INTERFACE CHARGE DISTRIBUTION IN THERMALLY OXIDIZED SILICON
ABOWITZ, G
ARNOLD, E
LADELL, J
[J]. PHYSICAL REVIEW LETTERS, 1967, 18 (14) : 543 - +
[2] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS
ARNOLD, E
ABOWITZ, G
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &
[3] ARNOLD E, TO BE PUBLISHED
[4] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[5] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
HEIMAN, FP
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
[6] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH4
[7] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
MORIN, FJ
MAITA, JP
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +