SYMMETRY OF INTERFACE CHARGE DISTRIBUTION IN THERMALLY OXIDIZED SILICON

[1] SIMPLE MERCURY DROP ELECTRODE FOR MOS MEASUREMENTS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (04) : 564 - &

[2] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2133 - &

[3] BARRETT CS, 1952, STRUCTURE METALS, P26

[4] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[5] DELORD JF, 1965, B AM PHYS SOC, V10, P546

[6] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202

[7] KAWAMURA N, TO BE PUBLISHED

[8] KOOI E, 1966, PHILIPS RES REP, V21, P477

[9] LADELL J, 1965, T AM CRYSTALLOGR ASS, V1, P86

[10] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH4

[1] SIMPLE MERCURY DROP ELECTRODE FOR MOS MEASUREMENTS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (04) : 564 - &

[2] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2133 - &

[3] BARRETT CS, 1952, STRUCTURE METALS, P26

[4] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[5] DELORD JF, 1965, B AM PHYS SOC, V10, P546

[6] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202

[7] KAWAMURA N, TO BE PUBLISHED

[8] KOOI E, 1966, PHILIPS RES REP, V21, P477

[9] LADELL J, 1965, T AM CRYSTALLOGR ASS, V1, P86

[10] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH4