SURFACE STATES AND INSULATOR TRAPS AT SI3N4-GAAS INTERFACE

被引：26

作者：

COOPER, JA

SCHWARTZ, RJ

WARD, ER

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 11期

关键词：

D O I：

10.1016/0038-1101(72)90042-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1219 / +

页数：1

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[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[2] GALLIUM ARSENIDE MOS TRANSISTORS
BECKE, H
HALL, R
WHITE, J
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &
[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[4] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[5] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &
[6] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
FLEMING, PJ
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[7] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE
FOSTER, JE
SWARTZ, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1410 - +
[8] SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING
GOETZBERGER, A
HEINE, V
NICOLLIAN, EH
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 95 - +
[9] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[10] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +