PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES

被引：123

作者：

CHU, TL

SZEDON, JR

LEE, CH

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 09期

关键词：

D O I：

10.1016/0038-1101(67)90003-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / &

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LEE, CH ;

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[4]

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[5]

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[6]

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[7] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

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[8]

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[9] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

[10]

LANG GA, 1963, RCA REV, V24, P488

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