PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS

被引：111

作者：

CHU, TL

LEE, CH

GRUBER, GA

机构：

来源：

关键词：

D O I：

10.1149/1.2426715

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：717 / &

共 17 条

[1] PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS
BARNES, CR
GEESNER, CR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 361 - 362
[2] SILICON NITRIDE THIN FILM DIELECTRIC
BARNES, CR
GEESNER, CR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) : 98 - 100
[3] BEAN KE, 1966, ELECTROCHEMICAL SOCI, V3, P41
[4] BILLY M, 1956, CR HEBD ACAD SCI, V242, P137
[5] CHU TL, 1965, AF196284220 WEST RES
[6] CHU TL, AD619992
[7] CHU TL, AFCRL65574
[8] Deeley G.G., 1961, POWDER METALL, V4, P145, DOI [10.1179/pom.1961.4.8.011, DOI 10.1179/POM.1961.4.8.011]
[9] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE
DOO, VY
NICHOLS, DR
SILVEY, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &
[10] DOO VY, 1966, IEEE T ELECTRON DEVI, VED13, P561