PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS

[11] GLEMSER O, 1958, Z ANORG ALLG CHEM, V298, P134

[12] GRIECO MJ, 1966, ELECTROCHEMICAL SOCI, V3, P47

[13] KNOPP AN, 1965, ELECTROCHEM TECHNOL, V3, P84

[14] POPPER P, 1961, BRIT CERAM T, V60, P603

[15] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &

[16] A NEW INSULATED-GATE SILICON TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 87 - +

[17] JANAF INTERIM THERMO

[11] GLEMSER O, 1958, Z ANORG ALLG CHEM, V298, P134

[12] GRIECO MJ, 1966, ELECTROCHEMICAL SOCI, V3, P47

[13] KNOPP AN, 1965, ELECTROCHEM TECHNOL, V3, P84

[14] POPPER P, 1961, BRIT CERAM T, V60, P603

[15] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &

[16] A NEW INSULATED-GATE SILICON TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 87 - +

[17] JANAF INTERIM THERMO