PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE

[1] JENKNER H, 1962, Patent No. 1136315

[2] NITROGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 427 - 431

[3] KUNTZ VE, 1965, Patent No. 3226194

[4] PLISKIN W, PRIVATE COMMUNICATIO

[5] POPPER P, 1961, BRIT CERAM T, V60, P603

[6] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &

[7] TURKDOGAN ET, 1958, J APPL CHEM-USSR, V8, P295

[8] WEISS I, 1910, Z ANORG CHEM, V65, P38

[9] Weiss L, 1910, Z ANORG CHEM, V65, P38

[1] JENKNER H, 1962, Patent No. 1136315

[2] NITROGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) : 427 - 431

[3] KUNTZ VE, 1965, Patent No. 3226194

[4] PLISKIN W, PRIVATE COMMUNICATIO

[5] POPPER P, 1961, BRIT CERAM T, V60, P603

[6] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &

[7] TURKDOGAN ET, 1958, J APPL CHEM-USSR, V8, P295

[8] WEISS I, 1910, Z ANORG CHEM, V65, P38

[9] Weiss L, 1910, Z ANORG CHEM, V65, P38