ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[2] BEAN KE, 1966, OCT PHIL M EL SOC

[3] BROWN GA, 1966, J ELECTROCHEM SOC, V113, pC315

[4] The red barrier of the internal photo effect and debonding work of the half ladder [J]. PHYSICA, 1935, 2 : 286 - 298

[5] Debye P., 1929, POLAR MOL, P77

[6] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 61 - &

[7] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &

[8] DOO VY, 1966, OCT PHIL M EL SOC

[9] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[10] Frohlich H., 1958, THEORY DIELECTRICS

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[2] BEAN KE, 1966, OCT PHIL M EL SOC

[3] BROWN GA, 1966, J ELECTROCHEM SOC, V113, pC315

[4] The red barrier of the internal photo effect and debonding work of the half ladder [J]. PHYSICA, 1935, 2 : 286 - 298

[5] Debye P., 1929, POLAR MOL, P77

[6] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 61 - &

[7] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &

[8] DOO VY, 1966, OCT PHIL M EL SOC

[9] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[10] Frohlich H., 1958, THEORY DIELECTRICS