SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM

被引：116

作者：

BEAN, KE

GLEIM, PS

YEAKLEY, RL

RUNYAN, WR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 07期

关键词：

D O I：

10.1149/1.2426719

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：733 / &

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