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PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
被引:71
作者
:
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
NICHOLS, DR
论文数:
0
引用数:
0
h-index:
0
NICHOLS, DR
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1968年
/ 115卷
/ 01期
关键词
:
D O I
:
10.1149/1.2411006
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:61 / &
相关论文
共 10 条
[1]
BEAN KE, 1966, OCT PHIL M SOC
[2]
PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
NICHOLS, DR
论文数:
0
引用数:
0
h-index:
0
NICHOLS, DR
SILVEY, GA
论文数:
0
引用数:
0
h-index:
0
SILVEY, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(12)
: 1279
-
&
[3]
FORGENG WP, 1958, T MET SOC AIME, V47, P343
[4]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[5]
EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(03)
: 97
-
&
[6]
PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
: 693
-
+
[7]
EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 385
-
&
[8]
LEE CH, 1966, OCT PHIL M SOC
[9]
SCOTT JH, 1966, OCT PHIL M SOC
[10]
TOLANSKY S, 1948, MULTIPLEBEAN INTERFE
←
1
→
共 10 条
[1]
BEAN KE, 1966, OCT PHIL M SOC
[2]
PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE
DOO, VY
论文数:
0
引用数:
0
h-index:
0
DOO, VY
NICHOLS, DR
论文数:
0
引用数:
0
h-index:
0
NICHOLS, DR
SILVEY, GA
论文数:
0
引用数:
0
h-index:
0
SILVEY, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(12)
: 1279
-
&
[3]
FORGENG WP, 1958, T MET SOC AIME, V47, P343
[4]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[5]
EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
[J].
APPLIED PHYSICS LETTERS,
1967,
10
(03)
: 97
-
&
[6]
PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
: 693
-
+
[7]
EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 385
-
&
[8]
LEE CH, 1966, OCT PHIL M SOC
[9]
SCOTT JH, 1966, OCT PHIL M SOC
[10]
TOLANSKY S, 1948, MULTIPLEBEAN INTERFE
←
1
→