ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION

被引：55

作者：

SAWADA, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 18期

关键词：

D O I：

10.1049/el:19760358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：471 / 472

页数：2

共 8 条

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ELECTRONICS LETTERS, 1976, 12 (02) :53-54

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APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[5] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1975, 11 (03) :53-54

[6] C-V CHARACTERISTICS OF GAP MOS DIODE WITH ANODIC OXIDE FILM [J].

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[7]

MIYAZAKI T, 1974, JPN J APPL PHYS, P441

[8] SMALL-SIGNAL ADMITTANCE OF INSULATOR N-TYPE GALLIUM-ARSENIDE INTERFACE REGION [J].

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ELECTRONICS LETTERS, 1972, 8 (16) :419-&

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