ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER

被引：294

作者：

HASEGAWA, H ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] UNIV NEWCASTLE UPON TYNE MERZ LABS,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 05期

关键词：

D O I：

10.1149/1.2132915

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：713 / 723

页数：11

共 28 条

[1] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE [J].

BALIGA, BJ ;

GHANDHI, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :410-415

[2] THE GROWTH OF BARRIER OXIDE FILMS ON ALUMINUM [J].

BERNARD, WJ ;

COOK, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) :643-646

[3]

BOCKRIS JO, 1959, MOD ASPECT ELECTROC, P262

[4]

BOCKRIS JO, 1966, MODERN ASPECTS ELECT, P176

[5] SURFACE STATES AND INSULATOR TRAPS AT SI3N4-GAAS INTERFACE [J].

COOPER, JA ;

SCHWARTZ, RJ ;

WARD, ER .

SOLID-STATE ELECTRONICS, 1972, 15 (11) :1219-+

[6] ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS [J].

DELLOCA, CJ ;

YAN, G ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :89-&

[7] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB [J].

DEWALD, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) :244-251

[8]

DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75

[9]

FELDMAN LC, 1973, P INT C ION BEAM SUR

[10] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE [J].

FOSTER, JE ;

SWARTZ, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1410-+

← 1 2 3 →