ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS

[1] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[2] ELLIPSOMETRY OF NON-UNIFORM ANODIC OXIDE FILMS [J]. SURFACE SCIENCE, 1969, 16 : 331 - &

[3] DELLOCA CJ, 1969, THESIS U BRITISH COL

[4] DURHAM EW, 1966, Patent No. 1041314

[5] THERMAL OXIDATION OF GALLIUM ARSENIDE [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (02) : 266 - &

[6] AN AMORPHOUS MODIFICATION OF GALLIUM-ARSENIC (V) OXIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (12) : 606 - 606

[7] OXIDE FILMS GROWN ON GAAS IN AN OXYGEN PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2924 - +

[8] YOUNG L, 1966, J ELECTROCHEM SOC, V113, P278

[9] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 208 - 211

[1] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[2] ELLIPSOMETRY OF NON-UNIFORM ANODIC OXIDE FILMS [J]. SURFACE SCIENCE, 1969, 16 : 331 - &

[3] DELLOCA CJ, 1969, THESIS U BRITISH COL

[4] DURHAM EW, 1966, Patent No. 1041314

[5] THERMAL OXIDATION OF GALLIUM ARSENIDE [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1968, 18 (02) : 266 - &

[6] AN AMORPHOUS MODIFICATION OF GALLIUM-ARSENIC (V) OXIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (12) : 606 - 606

[7] OXIDE FILMS GROWN ON GAAS IN AN OXYGEN PLASMA [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2924 - +

[8] YOUNG L, 1966, J ELECTROCHEM SOC, V113, P278

[9] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 208 - 211