METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES

被引：171

作者：

BRASLAU, N

GUNN, JB

STAPLES, JL

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 05期

关键词：

D O I：

10.1016/0038-1101(67)90037-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：381 / +

页数：1

共 10 条

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[9] INFLUENCE OF ARSENIC PRESSURE ON THE DOPING OF GALLIUM ARSENIDE WITH GERMANIUM [J].

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