MICROWAVE OSCILLATIONS IN HIGH-RESISTIVITY GAAS

被引：26

作者：

DAY, GF

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：88 / +

页数：1

共 13 条

[1] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].

BLANC, J ;

WEISBERG, LR .

[2]

DAY GF, 1965, B AM PHYS SOC, V10, P383

[3]

DROEMER H, PERSONAL COMMUNICATI

[4]

GATOS HC, 1960, PROPERTIES ELEMEN ED, P52

[5] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

[6]

GUNN JB, 1965, PLASMA EFFECTS SOLID, P199

[7]

Gurney R. W., 1940, ELECT PROCESSES IONI, P172

[8] PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs [J].

Hakki, B. W. ;

Knight, S. .

KROEMER, H .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1246-&

[10] THEORY OF GUNN EFFECT [J].

KROEMER, H .