SMALL-SIGNAL ADMITTANCE OF INSULATOR N-TYPE GALLIUM-ARSENIDE INTERFACE REGION

被引：21

作者：

QUAST, W

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 16期

关键词：

D O I：

10.1049/el:19720304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：419 / &

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[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &
[2] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE
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SWARTZ, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1410 - +
[3] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
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GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[4] ELECTRICAL CHARACTERISTICS OF GALLIUM ARSENIDE REAL SURFACES
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SOCHANSKI, JS
GATOS, HC
[J]. SURFACE SCIENCE, 1971, 26 (01) : 41 - +