ELECTRICAL CHARACTERISTICS OF GALLIUM ARSENIDE REAL SURFACES

被引：23

作者：

VALAHAS, TM

SOCHANSKI, JS

GATOS, HC

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(71)90112-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：41 / +

页数：1

共 16 条

[1] SURFACE POTENTIAL AND SURFACE CHARGE DISTRIBUTION FROM SEMICONDUCTOR FIELD EFFECT MEASUREMENTS
BROWN, WL
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 590 - 591
[2] DMITRYK NL, 1965, UKR FIZ ZH, V10, P745
[3] SURFACE MEASUREMENTS ON GALLIUM ARSENIDE
FLINN, I
BRIGGS, M
[J]. SURFACE SCIENCE, 1964, 2 : 136 - 145
[4] FRANKL DR, 1967, ELECTRICAL PROPERTIE
[5] FRANKL DR, 1967, ELECTRICAL PROPERTIE, P27
[6] TRAP LEVELS IN GALLIUM ARSENIDE
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 675 - &
[7] FIELD EFFECT MEASUREMENTS ON A AND B (111) SURFACES OF INDIUM ANTIMONIDE
HUFF, H
KAWAJI, S
GATOS, HC
[J]. SURFACE SCIENCE, 1966, 5 (04) : 399 - &
[8] GALLIUM ARSENIDE SURFACE STATES
KAWAJI, S
GATOS, HC
[J]. SURFACE SCIENCE, 1964, 1 (04) : 407 - 410
[9] MODULATION OF THE SURFACE CONDUCTANCE OF GERMANIUM BY PULSED ELECTRIC FIELDS
LOW, GGE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 1154 - 1157
[10] LYASHENKO VI, PRIVATE COMMUNICATIO