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TRAP LEVELS IN GALLIUM ARSENIDE
被引:39
作者
:
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1967年
/ 6卷
/ 06期
关键词
:
D O I
:
10.1143/JJAP.6.675
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:675 / &
相关论文
共 7 条
[1]
BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
BUBE, RH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(02)
: 225
-
&
[2]
TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(09)
: 837
-
+
[3]
TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(04)
: 503
-
+
[4]
FURUKAWA Y, 1967, JAPAN J APPL PHYS, V66, P13
[5]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
: 329
-
&
[6]
FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(07)
: 695
-
&
[7]
DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, R
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
: 3411
-
&
←
1
→
共 7 条
[1]
BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
BUBE, RH
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(02)
: 225
-
&
[2]
TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(09)
: 837
-
+
[3]
TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
ISHIBASHI, Y
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(04)
: 503
-
+
[4]
FURUKAWA Y, 1967, JAPAN J APPL PHYS, V66, P13
[5]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
: 329
-
&
[6]
FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(07)
: 695
-
&
[7]
DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, R
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(09)
: 3411
-
&
←
1
→