TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES

被引：30

作者：

FURUKAWA, Y

ISHIBASHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 04期

关键词：

D O I：

10.1143/JJAP.6.503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：503 / +

页数：1

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[1] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER
BLANC, J
MACDONALD, HE
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &
[2] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
CROWELL, CR
SHORE, HB
LABATE, EE
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3843 - &
[3] TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) : 13 - +
[4] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS
FURUKAWA, Y
KAJIYAMA, K
AOKI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) : 39 - &
[5] TRANSIENT PHENOMENA IN CAPACITANCE OF GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (09) : 837 - +
[6] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[7] HENISH HK, 1957, RECTIFYING SEMICONDU
[8] VAPOR GROWTH PARAMETERS AND IMPURITY PROFILES ON N-TYPE GAAS FILMS GROWN ON N+-GAAS BY HYDROGEN-WATER VAPOR PROCESS
LAWLEY, KL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 240 - &
[9] EFFECT OF DEEP LEVELS ON OPTICAL AND ELECTRICAL PROPERTIES OF COPPER-DOPED GAAS P-N JUNCTIONS
MORGAN, TN
PILKUHN, M
RUPPRECH.H
[J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1551 - &
[10] REFLECTIVITY AND OPTICAL CONSTANTS OF INDIUM ARSENIDE, INDIUM ANTIMONIDE, AND GALLIUM ARSENIDE
MORRISON, RE
[J]. PHYSICAL REVIEW, 1961, 124 (05): : 1314 - +