COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS

被引：4

作者：

FURUKAWA, Y

KAJIYAMA, K

AOKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 01期

关键词：

D O I：

10.1143/JJAP.5.39

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：39 / &

共 38 条

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J].

ARCHER, RJ ;

LEITE, RC ;

YARIV, A ;

PORTO, SPS ;

WHELAN, JM .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&

[2] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS [J].

ASHLEY, KL ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :369-&

[3] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].

BLANC, J ;

MACDONALD, HE ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&

[4] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[5] P-N JUNCTION LASERS [J].

BURNS, G ;

NATHAN, MI .

PROCEEDINGS OF THE IEEE, 1964, 52 (07) :770-+

[6] COMMON OCCURENCE OF ARTIFACTS OR GHOST PEAKS IN SEMICONDUCTOR INJECTION ELECTROLUMINESCENCE SPECTRA [J].

CARR, WN ;

BIARD, JR .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2776-&

[7]

FURUKAWA Y, IN PRESS

[8] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[9] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[10]

HALL RN, 1952, IRE, V40, P1512

← 1 2 3 4 →